Electrochemical preparation and characterization of three-dimensional nanostructured Sn2S3 semiconductor films with nanorod network

Three-dimensional (3D) nanostructured Sn₂S₃ semiconductor films have been prepared on ITO-coated glass substrates by potentiostatic electrodeposition at −0.80 V (vs. SCE) from a novel plating bath containing K₄P₂O₃ as a complexing agent and Na₂SO₃ as a stabilizing agent and by subsequent annealing. Results showed that the annealing drove the as-deposited Sn₂S₃ films to grow from a granular structure into a nanorod network structure. The nanorods were around 50-100 nm in diameter and 1000 nm in length. The band gap of the annealed film was 1.65 eV and the conductivity was n type. The carrier mobility achieved up to 20.5 cm² V⁻¹ s⁻¹ due to the direct electrical pathways provided by the nanorod network.