Composition dependent preferential orientation, dielectric and ferroelectric properties of Pb(ZrxTi1 − x)O3 thin films derived by sol-gel process |
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Authors: | P JegatheesanHarish Kumar Yadav Vinay GuptaNV Giridharan |
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Affiliation: | a Department of Physics, National Institute of Technology, Tiruchirappalli-620 015, Indiab Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India |
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Abstract: | Pb(ZrxTi1 − x)O3 (x = 0.35, 0.40, 0.60, 0.65) thin films were prepared by sol-gel spin on technique. From the X-ray diffraction analysis, PZT films with Zr-rich compositions (x = 0.60 and 0.65) had (111) preferential orientation and the preferential orientation changed to (100) for Ti-rich compositions (x = 0.35 and 0.40). The dielectric measurements on the above compositions at room temperature showed that the dielectric constant values were higher in Zr-rich compositions compared to Ti-rich compositions. The ferroelectric behavior measured in terms of the remnant polarization (Pr) and coercive field (Ec) up to an applied field of 260 kV/cm depicted that the Zr-rich PZT films with (111) preferential orientation had higher Pr and lower Ec values compared to the Ti-rich PZT films with (100) preferential orientation can be understood from the domain switching mechanism. |
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Keywords: | PZT Sol-gel Thin films Ferroelectric Dielectric |
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