Growth and properties of vertically well-aligned GaN nanowires by thermal chemical vapor deposition process期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Growth and properties of vertically well-aligned GaN nanowires by thermal chemical vapor deposition process

Authors:	S.M. KangB.K. Kang D.H. Yoon

Affiliation:	^a School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea ^b SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea

Abstract:	The vertically well-aligned GaN nanowires on c-Al₂O₃ substrates were grown via a vapor-liquid-solid mechanism. X-ray diffraction indicated the GaN nanowires to have epitaxial and homogeneous in-plan alignment with the c-Al₂O₃ substrates and a strong preferred orientation along the c-axis. The GaN nanowires had a single-crystalline hexagonal structure and c-axis orientation, as confirmed by high resolution transmission electron microscopy.

Keywords:	Nanomaterials Crystal growth Crystal structure
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