| VLSI用低介电常数含氟碳膜研究 |
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| 引用本文： | 刘雄飞,李幼真,肖剑荣. VLSI用低介电常数含氟碳膜研究[J]. 电子元件与材料, 2003, 22(1): 28-29,32 |
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| 作者姓名： | 刘雄飞 李幼真 肖剑荣 |
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| 作者单位： | 中南大学物理科学与技术学院,湖南,长沙,410083 |
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| 摘 要： | 用等离子体增强化学气相沉积(PECVD)法制备了不同工艺条件下的含氟碳膜。测量了薄膜的厚度和介电常数,并用傅立叶红外光谱分析了薄膜化学结构,发现薄膜成分和介电性与沉积工艺密切相关,对薄膜的SEM分析表明所得薄膜均匀致密。控制适当的工艺条件,可沉积理想的超大规模集成电路(VLSI)用钝化膜。
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| 关 键 词： | PECVD 沉积速率 含氟碳膜 介电常数 |
| 文章编号： | 1001-2028(2003)01-0028-02 |
The Research on Fluorinated Carbon Film for VLSI |
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| LIU Xiong-fei,LI You-zhen,XIAO Jian-rong. The Research on Fluorinated Carbon Film for VLSI[J]. Electronic Components & Materials, 2003, 22(1): 28-29,32 |
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| Authors: | LIU Xiong-fei LI You-zhen XIAO Jian-rong |
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| Abstract: | A-C:F thin films were prepared by PECVD method under different conditions. The thickness and dielectric constant were measured, and the chemical structure was analyzed by FTIR. The influence of the deposition techniques on the film composition and dielectric property is strong. The film was found homogeneous in the SEM analysis. The ideal A-C:F thin film could be acquired by choosing the suitable deposition techniques. |
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| Keywords: | PECVD deposition rate fluorinated carbon film dielectric constant |
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