In-situ synchrotron X-ray scattering study of thin film growth by atomic layer deposition |
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Authors: | Park Yong Jun Lee Dong Ryeol Lee Hyun Hwi Lee Han-Bo-Ram Kim Hyungjun Park Gye-Choon Rhee Shi-Woo Baik Sunggi |
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Affiliation: | Department of MSE, POSTECH, Pohang, Gyeongbuk 790-784, South Korea. |
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Abstract: | We report an atomic layer deposition chamber for in-situ synchrotron X-ray scattering study of thin film growth. The chamber was designed for combined synchrotron X-ray reflectivity and two-dimensional grazing-incidence X-ray diffraction measurement to do a in-situ monitoring of ALD growth. We demonstrate ruthenium thermal ALD growth for the performance of the chamber. 10, 20, 30, 50, 70, 100, 150 and 250-cycled states are measured by X-ray scattering methods during ALD growth process. Growth rate is calculated from thickness values and the surface roughness of each state is estimated by X-ray reflectivity analysis. The crystal structure of initial growth state is observed by Grazing-incidence X-ray diffraction. These results indicate that in-situ X-ray scattering method is a promising analysis technique to investigate the initial physical morphology of ALD films. |
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