A Monte Carlo simulation of silicon nitride thin film microstructure in ultraviolet localized-chemical vapor deposition

Microstructural changes of surfaces and bulk of a SiN: H were investigated at the atomic level by a simulator. The simulator is based on a solid-on-solid type model for ultraviolet localized-chemical vapor deposition. The calculations consider the well-defined photolysis products adsorbed at atomic sites. Incorporation of main species is enabled by a Monte Carlo-Metropolis simulation technique. Photodeposition rates are obtained using bond dissociation energies. In this manner, the dependence of root-mean-square deviation of surface roughness and bulk porosity on operating conditions can be predicted. Photonucleation and photodeposition with a UV low pressure mercury lamp at low pressure and temperature were simulated onto indium phosphide substrate.