| 热蒸发铜粉法制备硅纳米线的研究 |
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| 引用本文： | 刘建刚,范新会,陈建,于灵敏,严文.热蒸发铜粉法制备硅纳米线的研究[J].材料科学与工程学报,2005,23(4):589-592. |
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| 作者姓名： | 刘建刚 范新会 陈建 于灵敏 严文 |
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| 作者单位： | 西安工业学院,材料与化工学院,陕西,西安,710032 |
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| 基金项目： | 教育部优秀青年教师资助计划
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陕西省自然科学基金
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陕西省教育厅资助项目
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陕西省重点实验室基金 |
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| 摘 要： | 研究发现,热蒸发铜粉即可在硅衬底上直接生长出硅纳米线.场发射电子扫描电镜和透射电镜分析表明,纳米线的形貌、结构及生长机制,随沉积区域的不同而变化.在高温沉积区,硅纳米线高度弯曲且相互缠绕,按气-液-固机制生长;在低温沉积区,高度定向生长的直硅纳米线,规整地排列在硅衬底表面,其生长机制是氧化辅助生长机制.
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| 关 键 词： | 热蒸发 硅纳米线 气-液-固机制 氧化辅助生长机制 |
| 文章编号： | 1004-793X(2005)04-0589-04 |
| 修稿时间： | 2004年10月24 |
Synthesis of Silicon Nanowires by Thermally Evaporating Copper Powders |
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| LIU Jian-gang,FAN Xin-hui,CHEN Jian,YU Ling-min,YAN Wen.Synthesis of Silicon Nanowires by Thermally Evaporating Copper Powders[J].Journal of Materials Science and Engineering,2005,23(4):589-592. |
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| Authors: | LIU Jian-gang FAN Xin-hui CHEN Jian YU Ling-min YAN Wen |
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| Abstract: | A new method to synthesize silicon nanowires (SiNWs) by means of thermally evaporating copper powders is reported in this paper. Using Field Emission SEM (FE-SEM) and TEM, the as-grown products have been analyzed. The results reveal that the morphology, microstructure and growth mechanism vary with the deposition area of SiNWs. In high temperature deposition area, highly curved and tangled SiNWs, whose growth mechanism is the VLS (Vapor-Liquid-Solid) mechanism, have been obtained. However, in lower temperature deposition area, straight and highly oriented SiNWs regularly distributed on Si substrate, and its growth mechanism is the OG (oxide-assisted growth)mechanism. |
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| Keywords: | thermal evaporation SiNWs VLS mechanism OG mechanism |
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