| GaN基半导体材料研究进展 |
| |
| 引用本文： | 郎佳红,顾彪,徐茵,秦福文.GaN基半导体材料研究进展[J].激光与光电子学进展,2003,40(3):45-49. |
| |
| 作者姓名： | 郎佳红 顾彪 徐茵 秦福文 |
| |
| 作者单位： | 大连理工大学三束材料改性国家重点实验室,大连,116024;大连理工大学电气工程与应用电子技术系,大连,116024 |
| |
| 基金项目： | 国家自然科学基金(69976008) |
| |
| 摘 要： | 简单回顾半导体短波长激光器的发展过程，总结了GaN基激光二极管的发展以及GaN薄膜的几点技术进展。
|
| 关 键 词： | 半导体激光器 激光二极管 GaN薄膜 半导体材料 外延生长 P型掺杂 |
| 收稿时间： | 2002/10/23 |
Research Progress of the GaN-based Semiconductor Materials |
| |
| LANG Jiahong GU Biao XU Yin QIN Fuwen
National Key Laboratory of Material Modification by -Beams,Dalian University of Technology,Dalian Electrical Engineering and Applied Electronic Technology.Research Progress of the GaN-based Semiconductor Materials[J].Laser & Optoelectronics Progress,2003,40(3):45-49. |
| |
| Authors: | LANG Jiahong GU Biao XU Yin QIN Fuwen
National Key Laboratory of Material Modification by -Beams Dalian University of Technology Dalian Electrical Engineering and Applied Electronic Technology |
| |
| Affiliation: | LANG Jiahong GU Biao XU Yin QIN Fuwen
National Key Laboratory of Material Modification by 3-Beams,Dalian University of Technology,Dalian 116024 Electrical Engineering and Applied Electronic Technology Department,Dalian University of Technology,Dalian 116024 |
| |
| Abstract: | The development course of short wavelength semiconductor lasers are briefly reviewed, and a few technological progresses for GaN-based semiconductor lasers are described. |
| |
| Keywords: | GaN semiconductor LDs multi-quantum-well |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
