Minority-carrier transport parameters in degenerate n-type silicon |
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Authors: | Wang C.H. Neugroschel A. |
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Affiliation: | Dept. of Electr. Eng., Florida Univ., Gainesville, FL; |
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Abstract: | Direct measurements of the minority-hole transport parameters in degenerate n-type silicon were done by analyzing transient photocurrent in the frequency domain. Minority-hole mobility is found to increase with doping for dopings larger than 4×1019 cm-3 . The ratio of minority-hole to majority-hole mobility is found to be about 2.8 at ND=7.2×1019 cm-3. The measured lifetime shows a strongly Auger-dependent mechanism. The extracted Auger coefficient at 296 K is Cn =2.22×10-31 cm6-s-1, and is in agreement with that reported on other works. Self-consistent checking is used to validate the accuracy of the measured results |
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