非掺半绝缘LEC-GaAs晶片热处理工艺研究

为了获得高质量半绝缘砷化镓单晶片．有必要降低微缺陷密度，开展了晶片热处理工艺的研究．确定了晶片热处理的温度、时间、降温建率等一系列工艺参数，证实丁采用此项工艺能降低LEG-GaAs晶片的砷沉淀密度，郎AB-EPD，同时也保证了晶片的电学参数不受影响。通过对晶片热处理工艺过程和结果进行分析．给出了晶片热处理工艺理论模型的解释。

Research of Undoped Semi-Insulating LEC GaAs Wafer Annealing Process

To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density. The wafer annealing process, as wafer annealing temperature, annealing time and cooling rate etc., were developed. It proves that microscopic defect density (AB-EPD) of LEC GaAs wafer may be decreased by using multiple wafer annealing. At the same time, it is necessary to be sure that wafer annealing does not affect electrical properties of semi-insulating GaAs wafer. After analyzing the process and the result of wafer annealing, the explanation of wafer annealing process model was made.