Role of a nucleation layer in suppressing interfacial pitting in |
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Authors: | A K Ballal L Salamanca-Riba D L Partin J Heremans L Green B K Fuller |
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Affiliation: | (1) Materials and Nuclear Engineering Department, University of Maryland, 20742-2115 College Park, MD;(2) Physics Department, General Motors Research Laboratories, 48090-9055 Warren, MI |
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Abstract: | In this work, we investigate the role of a low temperature nucleation layer on the interfacial properties of InAs epilayers
grown on (100) semi-insulating InP substrates using a two-step metalorganic chemical vapor deposition method. Cross-sectional
and plan-view transmission electron microscopy studies were carried out on InAs films of nearly equal total film thicknesses
but for different thicknesses of a nucleation layer of InAs deposited at low temperature on the substrate. Our studies show
that thermal etchpits are created at the interface between the InAs film, and the InP substrate for thin nucleation layer
thicknesses. This is because the low temperature nucleation layer of InAs does not cover completely the surface of the InP
substrate. Hence, when the temperature is raised to deposit the bulk of the InAs film, severe thermal pitting is observed
at the interface. These thermal etchpits are sources of threading dislocations. To obtain high quality InAs films and suppress
interfacial pitting there is an optimum thickness of the nucleation layer. Also, our studies show that there is a relationship
between the density of defects in the film and the thickness of the nucleation layer. This in turn relates to the variation
of the electronic properties of the InAs films. We have observed that for all nucleation layer thicknesses, the density of
threading dislocations is higher close to the interface than at the free surface of the film. |
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Keywords: | InAs InP substrates nucleation layer |
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