Improved hydrogen-sensing performance of a Pd/GaN Schottky diode with a surface plasma treatment approach |
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| Authors: | Tai-You ChenAuthor VitaeHuey-Ing ChenAuthor Vitae Chien-Chang HuangAuthor VitaeChi-Shiang HsuAuthor Vitae Po-Shun ChiuAuthor VitaePo-Cheng ChouAuthor Vitae Wen-Chau LiuAuthor Vitae |
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| Affiliation: | a Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC
b Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC |
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| Abstract: | The improved hydrogen-sensing performance of a Pd/GaN Schottky diode with a simple surface treatment is demonstrated. The studied device with an inductively coupled-plasma (ICP)-treatment shows both the good sensitivity and fast response. A high hydrogen detection sensing response of 2.05 × 105, under exposing to a 10,000 ppm H2/air gas at room temperature, is obtained. It is found that, due to the increased surface roughness, more hydrogen atoms are adsorbed on the active layer which leads to the substantial increase of current change. In addition, the studied device shows a stable and widespread reverse voltage operating regime (−0.3 to −3 V) and a fast response about of 2.9 s. Therefore, this simple surface treatment approach gives the promise for hydrogen sensing applications. |
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| Keywords: | GaN Pd Hydrogen Sensor Surface treatment |
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