On the chemical vapour deposition of Ti3SiC2 from TiCl4-SiCl4-CH4-H2 gas mixtures |
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Authors: | C Racault F Langlais C Bernard |
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Affiliation: | (1) Laboratoire des Composites Thermostructuraux (UMR-47 CNRS-SEP-UB1), Domaine Universitaire, 3 allée de La Boëtie, 33600 Pessac, France;(2) Laboratoire de Thermodynamique et Physico-chimie Métallurgiques (URA-39), ENSEEG, Domaine Universitaire, BP 75, 38402 Saint Martin d'Hères, France |
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Abstract: | In the ternary system Ti-Si-C, the ternary compound Ti3SiC2 seems to exhibit promising thermal and mechanical properties. Its synthesis as a thin film from the vapour phase is very difficult owing to the complexity of the system. A contribution to the knowledge of the CVD of Ti3SiC2 from a TiCl4-SiCl4-CH4-H2 gas mixture is proposed on the basis of a thermodynamic approach. This approach is based on a reliable estimation of Ti3SiC2 thermodynamic data in good accordance with recent experimental results on its thermal stability. A first equilibrium calculation for the deposition on an inert substrate shows the influence of the experimental parameters on the composition of both the deposit and the gas phase. As a result, the deposition of Ti3SiC2 can be favoured by an excess of TiCl4 ( 45%), a rather low pressure (10–20 kPa), high temperature ( 1273 K) and low H2 dilution ratio. On the basis of equilibrium calculations for various reactive substrates, complex mechanisms of Ti3SiC2 deposition are pointed out, with intermediate steps of substrate consumption, e.g. the formation of TiC from a carbon substrate or TiSi2 from a silicon substrate. |
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