Thermal stability of Cu(W) and Cu(Mo) films for advanced barrierless Cu metallization: Effects of annealing time |
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Authors: | J P Chu C H Lin |
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Affiliation: | (1) Institute of Materials Engineering, National Taiwan Ocean University, 202 Keelung, Taiwan;(2) Department of Electronic Materials, Chin-Min Institute of Technology, 360 Miao-Li, Taiwan |
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Abstract: | The current study investigates the effects of insoluble substances (W and Mo) in pure Cu films on the thermal stability, microstructure,
and electrical properties of the films. The results can be used to assess the feasibility of the barrierless Cu film in the
metallization process. The films investigated were deposited using magnetron sputtering onto the barrierless Si (100) substrate
and then annealed between 400°C and 450°C in vacuum for long periods of time. After annealing, the film properties were examined
by x-ray diffraction (XRD), the four-point probe method, leakage current measurements, and focused ion beam (FIB) analysis.
The results indicate that no detectable copper silicide is formed after 48-h annealing of Cu(W) films at 400°C. In contrast,
for the Cu(Mo) film, copper silicide is formed after 18-h annealing at the same temperature and hence electrical properties
are poor. This evidence suggests that the Cu(W) film has better thermal stability during long periods of annealing and is
suitable for an advanced barrierless metallization process. |
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Keywords: | Copper metallization barrierless focused ion beam (FIB) thermal reliability |
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