SiC基的高性能紫外光电探测器

用宽禁带半导体n-4H-SiC和金属Au作肖特基接触，Ti, Ni, Ag合金作背底形成欧姆接触，研制出Au/n-4H-SiC肖特基紫外探测器. 测试分析了器件在高温高压下的光谱响应特性，响应范围在200～400nm之间，室温无偏压下，响应峰值在320nm，响应半宽为82nm. 在高反压下（100V以上）探测器的光谱响应曲线出现了锐上升和锐截止，在260～380nm之间有非常平稳的光谱响应；在高温533K无偏压下，紫外响应特性仍然保持良好.

High Quality Ultraviolet Photodetectors Based on Silicon Carbide

Au/n-4H-SiC Schottky ultraviolet photodetectors are fabricated using wide band semiconductor n-4H-SiC and metal Au as Schottky contact and ohmic contact of Ti, Ni, Ag alloys on the back side.The spectrum response characteristics at high temperature and high reverse biased voltage of the devices are measured and analyzed.The response wavelength range is between 200 and 400nm.At room temperature without biased voltage,the response peak is found at 320nm and the half width of response wavelength is 82nm.The spectrum response and cut-off velocity of the detectors increase sharply at high reverse biased voltage(above one hundred voltage).And the spectrum response curves are very plain between 260 and 380nm.At 533K without biased voltage,UV response characteristics of the device remain very well.