固态电解液阻变存储器导电细丝生长过程的模拟研究

本文对基于固态电解液的阻变存储器导电细丝的微观生长过程进行了蒙特卡洛模拟研究,模拟过程引入了多种物理和化学机制。模拟计算结果表明导电细丝形貌以及导电细丝不同的生长方向由金属离子在电解质材料中的迁移速率所决定。迁移速率较大的情况下,细丝由阴极向阳极生长；迁移速率较小的情况下细丝生长过程表现为从阳极向阴极生长。根据模拟出来的细丝形貌以及电流电压特性,我们对细丝的生长过程进行了详细讨论,模拟结果能很好地吻合实验结果。

Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

Monte Carlo (MC) simulations, including multiple physical and chemical mechanisms, were performed to investigate the microstructure evolution of a conducting metal filament in a typical oxide-electrolyte-based ReRAM. It has been revealed that the growth direction and geometry of the conductive filament are controlled by the ion migration rate in the electrolyte layer during the formation procedure. When the migration rate is relative high, the filament is shown to grow from cathode to anode. When the migration rate is low, the growth direction is expected to start from the anode. Simulated conductive filament (CF) geometries and I-V characteristics are also illustrated and analyzed. A good agreement between the simulation results and experiment data is obtained.