| Design and fabrication of Si LED with the N-well-P^＋ junction based on standard CMOS technology |
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| 引用本文： | 杨广华. Design and fabrication of Si LED with the N-well-P^＋ junction based on standard CMOS technology[J]. 光电子快报, 2010, 6(1): 15-17. DOI: 10.1007/s11801-010-9082-y |
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| 作者姓名： | 杨广华 |
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| 作者单位： | School;Electronic;Information;Engineering;Tianjin;University;Institute;Communication;Polytechnic;Semiconductors;Chinese;Academy;Science; |
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| 基金项目： | supported by the National Natural Science Foundation of China (Nos.60536030,60676038);;the Key Project of Tianjin (No.06YFJZJC00200) |
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| 摘 要： | A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P+ junction. The P+ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs’ emitting and layout are captured. The I-V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm.
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| 关 键 词： | 硅发光二极管 CMOS技术 标准 设计 制造 微米技术 显微照片 光谱测试 |
Design and fabrication of Si LED with the N-well-P+ junction based on standard CMOS technology |
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| Guang-hua Yang. Design and fabrication of Si LED with the N-well-P+ junction based on standard CMOS technology[J]. Opto-electronics Letters, 2010, 6(1): 15-17. DOI: 10.1007/s11801-010-9082-y |
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| Authors: | Guang-hua Yang |
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| Affiliation: | [1]School of EIectronic and Information Engineering, Tianjin University, Tianjin 300072, China [2]Institute of Information and Communication, Tianjin Polytechnic University, Tianjin 300160, China [3]Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China |
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| Abstract: | A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P+ junction. The P+ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs’ emitting and layout are captured. The I–V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm. |
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