| 调制掺杂AlxGa1-xN/GaN异质结磁输运研究 |
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| 引用本文： | 郑泽伟,沈波,张荣,桂永胜,蒋春萍,马智训,郑国珍,郭少令,施毅,韩平,郑有炓.调制掺杂AlxGa1-xN/GaN异质结磁输运研究[J].功能材料与器件学报,2000,6(4):381-384. |
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| 作者姓名： | 郑泽伟 沈波 张荣 桂永胜 蒋春萍 马智训 郑国珍 郭少令 施毅 韩平 郑有炓 |
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| 作者单位： | 1. 南京大学物理系,固体微结构国家重点实验室,南京210093
2. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 |
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| 基金项目： | 中国科学院资助项目，the National High Technology Research & Development Project of China，69806006;69976014;69636010;69987001，863-715-001-0030，， |
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| 摘 要： | 通过低温和高磁场下的磁输运测量，首次在Ａｌ０．２２Ｇａ０．７８Ｎ／ＧａＮ异质结中观察到了舒勃尼科夫－德哈斯振荡的双周期特性，发现在Ａｌ０．２２Ｇａ０．７８Ｎ／ＧａＮ异质结的三角势阱中产生了二维电子气（２ＤＥＧ）的第二子带占据，发生第二子带占据的阈值２ＤＥＧ浓度估算为７．２＊１０＾１２ｃｍ＾－２，在阈值２ＤＥＧ浓度下第一子带和第二子带能级的距离计算为７５ｍｅＶ。
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| 关 键 词： | 异质结 第二子带占据 氮化镓 磁输运 二维电子气 |
Magnetotransport investigation of modulation-doped AlxGa1-xN/GaN heterostructures |
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| ZHENG Ze-Wei,SHEN Bo,ZHANG Rong,GUI Yong-Sheng,JIANG Chun-ping,MA Zhi-xun,ZHENG Guo-zhen,GUO Shao-ling,SHI Yi,HAN Ping,ZHENG You-dou.Magnetotransport investigation of modulation-doped AlxGa1-xN/GaN heterostructures[J].Journal of Functional Materials and Devices,2000,6(4):381-384. |
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| Authors: | ZHENG Ze-Wei SHEN Bo ZHANG Rong GUI Yong-Sheng JIANG Chun-ping MA Zhi-xun ZHENG Guo-zhen GUO Shao-ling SHI Yi HAN Ping ZHENG You-dou |
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| Affiliation: | 1.Department of Physics a |
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| Abstract: | Magnetoresistance of modulation-doped Al0.22Ga0.78N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The double periodicity of the Shubnikov-de Hass oscillations was observed. It was found that the occupation of the first two subbands by the two-dimensional electron gas(2DEG) in the triangular quantum well at the Al0.22Ga0.78N/GaN heterointerface took place when the 2DEG sheet concentration reached 7.2×1012 cm-2. The energy separation of the first and the second subbands in the quantum well was determined to be 75 meV just before the second subband was occupied. |
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| Keywords: | Heterostructures Shubnikov-de Hass oscilation Double subbands occupation |
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