| Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy |
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| 作者姓名： | Tang Ning Shen Bo Wang Maojun Yang Zhijian Xu Ke Zhang Guoyi Gui Yongsheng Zhu Bo Guo Shaoling Chu Junhao |
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| 作者单位： | [1]北京大学物理学院人工微结构和介观物理国家重点实验室,北京100871 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)
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国家高技术研究发展计划(863计划)
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中国科学院资助项目
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国家自然科学基金
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高等学校博士学科点专项科研项目 |
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| 摘 要： | 在低温和强磁场下,通过磁输运测量研究了不同Al组分调制掺杂AlxGa1-xN/GaN异质结二维电子气(2DEG)的磁电阻振荡现象.观察到低Al组分异质结中的2DEG有较低的浓度和较高的迁移率.
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| 关 键 词： | AlxGa1-xN/GaN异质结构 二维电子气 输运性质 Alx Ga1- x N/GaN heterostructure two-dimensional electron gas transport property 组分 异质结构 二维电子气 输运性质 影响 Electron Transport Properties Composition Influence heterostructures composition barrier lower concentration mobility different measurements low temperatures high magnetic fields Magnetotransport |
| 文章编号： | 0253-4177(2006)02-0235-04 |
| 收稿时间： | 09 1 2005 12:00AM |
| 修稿时间： | 11 2 2005 12:00AM |
Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy |
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| Tang Ning,Shen Bo,Wang Maojun,Yang Zhijian,Xu Ke,Zhang Guoyi,Gui Yongsheng,Zhu Bo,Guo Shaoling,Chu Junhao.Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J].Chinese Journal of Semiconductors,2006,27(2):235-238. |
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| Authors: | Tang Ning Shen Bo Wang Maojun Yang Zhijian Xu Ke Zhang Guoyi Gui Yongsheng Zhu Bo Guo Shaoling and Chu Junhao |
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| Affiliation: | 1.State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | Magnetotransport properties of two-dimensional electron gases (2DEG) in Al_xGa_(1-x)N/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields.It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility. |
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| Keywords: | Alx Ga1-x N/GaN heterostructure two-dimensional electron gas transport property |
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