A low-drive-voltage, high-speed monolithic multiple-quantum-wellmodulator/DFB laser light source |
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| Authors: | Kotaka I Wakita K Okamoto M Asai H Kondo Y |
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| Affiliation: | NTT Opto-Electron. Lab., Kanagawa; |
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| Abstract: | A high-speed InGaAs/InAlAs multiple-quantum-well (MQW) intensity modulator and an InGaAsP/InGaAs MQW distributed feedback laser were monolithically integrated by using a hybrid growth technique combining molecular beam epitaxy and metalorganic vapor phase epitaxy. An operating drive voltage of only 2.0 V, a 20-dB on/off ratio, and a 3-dB bandwidth greater than 15 GHz were obtained. This device operated stably in a single mode and with a side-mode suppression ratio of more than 50 dB |
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