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环氧树脂表面生成聚噻吩的研究及直接电镀应用
引用本文:李玖娟,陈苑明,朱凯,王翀,何为,张怀武,彭勇强,艾克华. 环氧树脂表面生成聚噻吩的研究及直接电镀应用[J]. 电镀与精饰, 2018, 0(5): 5-10. DOI: 10.3969/j.issn.1001-3849.2018.05.002
作者姓名:李玖娟  陈苑明  朱凯  王翀  何为  张怀武  彭勇强  艾克华
作者单位:电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054;奈电软性科技电子(珠海)有限公司技术中心,广东珠海519040;四川英创力电子科技股份有限公司,四川遂宁629000奈电软性科技电子(珠海)有限公司技术中心,广东珠海,519040四川英创力电子科技股份有限公司,四川遂宁,629000
基金项目:国家自然基金项目(61474019和61604034),广东省科技计划项目(2016B090918095)
摘    要:采用化学聚合方法,在高锰酸钾处理过的环氧树脂表面生成一层聚噻吩,应用聚噻吩作为导电载体实现环氧树脂表面的直接电镀铜,并对聚噻吩的结构与生长形貌以及铜层生长效果进行了表征。结果表明,在EP基板上合成聚噻吩能用于直接电镀铜,合成的聚噻吩为无定型结构,其表面平均电阻约为2.55 kΩ,聚噻吩上电镀铜后,铜层的平均电阻值为0.25Ω,电镀铜层纵向与横向粗糙度分别为10.76μm和2.06μm,铜镀层的沉积速率达到71.4μm/h。

关 键 词:聚噻吩  化学聚合  高锰酸钾  直接电镀  polythiophene  chemical polymerization  potassium permanganate  direct plating

Study on the Formation of Polythiophene on Epoxy Resin Surface and Its Application in Direct Electroplating
LI Jiujuan,CHEN Yuanming,ZHU Kai,WANG Chong,HE Wei,ZHANG Huaiwu,PENG Yongqiang,AI Kehua. Study on the Formation of Polythiophene on Epoxy Resin Surface and Its Application in Direct Electroplating[J]. Plating & Finishing, 2018, 0(5): 5-10. DOI: 10.3969/j.issn.1001-3849.2018.05.002
Authors:LI Jiujuan  CHEN Yuanming  ZHU Kai  WANG Chong  HE Wei  ZHANG Huaiwu  PENG Yongqiang  AI Kehua
Abstract:Polythiophene was produced on the surface of epoxy resin treated with potassium permanganate using chemical polymerization method.Direct copper electroplating on epoxy resin surface could be realized by using polythiophene as an electric conduction carrier.Structure and growth morphology of the polythiophene,and growth effect of the copper layer were characterized.The results showed that polythiophene synthesized on EP plate possessed an amorphous structure and could be used in direct electroplating of copper.Its surface average resistance was about 2.55 kΩ.After copper plating on polythiophene,the average resistance of copper layer was 0.25 Ω.The longitudinal and transverse roughness of copper layer was 10.76 μm and 2.06 μm respectively,and the plating rate of copper could reach 71.4μm/h.
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