BiVO4掺杂对CLST介质陶瓷介电性能的影响

采用传统陶瓷工艺制备了BiVO4掺杂的CaO-Li2O-Sm2O3-TiO2(CLST)介质陶瓷,用X-射线衍射仪、扫描电镜及电感-电容-电阻测试仪等对其烧结特性、相结构及介电性能进行了系统研究.结果表明,BiVO4掺杂能显著降低CLST陶瓷的烧结温度,由1 300 ℃降至1 200 ℃.BiVO4掺杂量为1%,烧结温度为1 200 ℃时,CLST陶瓷具有较好的综合介电性能:εr＝88,tan δ＝0.018,τ f =-30×10-6/℃.

Effect of BiVO4 Doping on Dielectric Properties of CLST Microwave Dielectric Ceramics

Dielectric ceramics CaO-Li2O-Sm2O3-TiO2 doped with BiVO4 were prepared by the conventional ceramic processing technology. The sintering behavior, crystal structure and dielectric properties of BiVO4 doped CLST ceramics were investigated systematically by X-ray diffraction, scanning electron microscopy and inductance-capacitance resistance analysis.The experimental results indicated that BiVO4 doping could decrease the sintering temperature remarkably from 1 300 ℃ to 1 200 ℃.The CLST ceramic with 1% BiVO4 doping sintered at 1 200 ℃ had some optimum dielectric properties: dielectric constant εr of 88, dielectric loss tan δ of 0.018 and temperature coefficient of resonance frequency τ f of -30×10-6/℃.