| 不同结构CMOS运算放大器电路的电离辐射效应 |
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| 引用本文： | 任迪远,陆妩,郭旗,余学锋,严荣良,胡浴红,王明刚,赵元富. 不同结构CMOS运算放大器电路的电离辐射效应[J]. 半导体学报, 2000, 21(9): 898-903 |
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| 作者姓名： | 任迪远 陆妩 郭旗 余学锋 严荣良 胡浴红 王明刚 赵元富 |
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| 作者单位： | [1]中国科学院新疆物理研究所 [2]西安微电子技术研究所 |
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| 摘 要： | 介绍了在相同工艺条件下 ,N沟和 P沟输入两种不同结构 CMOS运算放大器电路的电离辐照响应规律及各子电路对电特性的影响情况 .结果表明 :由辐照感生的氧化物电荷引起的N沟镜像负载的不对称是导致 P沟输入运放电特性衰降的主要机制 ;而由氧化物电荷和界面态引起的 N沟差分对的漏电增大则是造成 N沟输入运放电路性能变差的主要原因
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| 关 键 词： | CMOS 运算放大器 电离辐射效应 氧化物电存 界面态 |
| 文章编号： | 0253-4177(2000)09-0898-06 |
| 修稿时间： | 1999-05-05 |
Total Dose Radiation Effects of CMOS Operational Amplifier with Different Structures |
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| REN Di|yuan,LU Wu,GUO Qi,YU Xue|feng and YAN Rong|liang. Total Dose Radiation Effects of CMOS Operational Amplifier with Different Structures[J]. Chinese Journal of Semiconductors, 2000, 21(9): 898-903 |
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| Authors: | REN Di|yuan LU Wu GUO Qi YU Xue|feng YAN Rong|liang |
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| Affiliation: | REN Di-yuan,LU Wu,GUO Qi,YU Xue-feng,YAN Rong-liang(Xinjiang Institute of Physics, The Chinese Academy of Sciences, Urumqi 830011 ,China)HU Yu-hong(Xi'an Microelectronics Techinques Institute,Xi'an 710600, China) |
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| Abstract: | The total dose radiation effects of CMOS operational amplifiers (op|am ps)with N and P channel transistors inputs have been studied. Influences contributed by some sub sidiary circuits in irradiation on the op|amps' characteristics have also been investigated. It i s shown that the main mechanism of the op|amps with P|channel transistor input,which makes the performance degrade is the unbalance of the N|channel transistors' mirror|load. On the other hand, the in crease of the leakage current of differential pair is the most important reason for the deter ioration of the op|amps behavior with N|channel transistor input. |
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| Keywords: | CMOS operational amplifier total dose radiation oxide charges interface states |
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