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Light-emitting Si:Er structures produced by molecular-beam epitaxy: High-resolution photoluminescence spectroscopy |
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| Authors: | Kryzhkov D. I. Sobolev N. A. Andreev B. A. Denisov D. V. Krasil’nik Z. F. Shek E. I. |
| Affiliation: | (1) Institute of the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603600, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
| Abstract: | Semiconductors - The photoluminescence spectra of light-emitting structures based on silicon layers doped with erbium in the course of growth by molecular-beam epitaxy at temperatures ranging from... |
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