Positive oxide-charge generation during 0.25 μm PMOSFEThot-carrier degradation |
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Authors: | Woltjer R. Paulzen G.M. Lifka H. Woerlee P. |
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Affiliation: | Philips Res. Lab., Eindhoven; |
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Abstract: | A new hot-carrier degradation mechanism becomes important in 0.25 μm PMOSFET's. Hot-hole injection generates positive oxide charge near the drain. We determine the time dependence and the oxide-thickness dependence and we show a considerable enhancement of this degradation mechanism for nitrided gate oxides. For many bias conditions and many geometries, the time dependence of PMOSFET degradation can be successfully described by a summation of the time dependences of three separate degradation mechanisms: generation of interface states, negative oxide charge and positive oxide charge |
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