| Abstract: | In recent years, several researchers have reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions. A large negative resistance is observed in the I-V characteristics of such a junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13?nm. Furthermore, such a junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0?V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage. |
