Fabrication and electrical characterization of circuits based on individual tin oxide nanowires |
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Authors: | Hernández-Ramírez Francisco Tarancón Albert Casals Olga Rodríguez Jordi Romano-Rodríguez Albert Morante Joan R Barth Sven Mathur Sanjay Choi Tae Y Poulikakos Dimos Callegari Victor Nellen Philipp M |
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Affiliation: | EME/CErMAE/CEMIC, Departament d'Electrònica, University of Barcelona, E-08028 Barcelona, Spain. |
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Abstract: | Two-?and four-probe electrical measurements on individual tin oxide (SnO(2)) nanowires were performed to evaluate their conductivity and contact resistance. Electrical contacts between the nanowires and the microelectrodes were achieved with the help of an electron-?and ion-beam-assisted direct-write nanolithography process. High contact resistance values and the nonlinear current-bias (I-V) characteristics of some of these devices observed in two-probe measurements can be explained by the existence of back-to-back Schottky barriers arising from the platinum-nanowire contacts. The nanoscale devices described herein were characterized using impedance spectroscopy, enabling the development of an equivalent circuit. The proposed methodology of nanocontacting and measurements can be easily applied to other nanowires and nanometre-sized materials. |
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