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Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties
Authors:Shan C X  Liu Z  Zhang X T  Wong C C  Hark S K
Abstract:Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemical vapour deposition system. Electron microscopy shows that they are smooth and uniform in size. Both transmission electron microscopy and x-ray diffraction reveal the wurtzite structure of the nanowires, which grows along the Formula: see text] direction. Raman scattering studies on individual nanowires were performed in the back-scattering geometry at room temperature. Besides the commonly observed longitudinal and transverse optical phonon modes, a possible surface mode located at 233?cm(-1) is also observed in the Raman spectrum. A peak located at 2.841?eV was clearly observed in the photoluminescence spectra of the nanowires, which can be assigned to near band edge emissions of wurtzite ZnSe.
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