| VB-GaAs抛光片表面粗糙度研究 |
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| 引用本文： | 杨洪星,李响,刘春香,吕菲.VB-GaAs抛光片表面粗糙度研究[J].中国电子科学研究院学报,2007,2(5):527-530,543. |
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| 作者姓名： | 杨洪星 李响 刘春香 吕菲 |
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| 作者单位： | 中国电子科技集团公司第46研究所,天津,300220 |
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| 摘 要： | 将表面粗糙度作为评价垂直布里奇曼法砷化镓(VB-GaAs)抛光片表面质量的一项技术指标,研究了不同粒径的抛光液对VB-GaAs抛光片表面粗糙度的影响.通过试验对比,对于不同抛光阶段(包括粗抛、细抛及精抛三个阶段)进行了分析,粗抛阶段应采用较大粒径的抛光液,细抛阶段应采用稍小粒径的抛光液,而精抛阶段应采用小粒径的抛光液.
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| 关 键 词： | 砷化镓 VB法 抛光技术 表面粗糙度 |
| 文章编号： | 1673-5692（2007）05-527-04 |
| 修稿时间： | 2007-06-202007-09-12 |
Research on Surface Roughness of VB-GaAs Polished Wafers |
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| YANG Hong-xing,LI Xiang,LIU Chun-xiang,LV Fei.Research on Surface Roughness of VB-GaAs Polished Wafers[J].Journal of China Academy of Electronics and Information Technology,2007,2(5):527-530,543. |
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| Authors: | YANG Hong-xing LI Xiang LIU Chun-xiang LV Fei |
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| Affiliation: | The 46th Research Institute of CETC, Tianjin 300220, China |
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| Abstract: | The article studies surface roughness of VB GaAs Polished Wafers.The diameter of silicon dioxide particle in the slurry,which has an important effect on the surface roughness,is investigated.Through several experiments,it is found that different diameters of silicon dioxide particle should be used in different procedures.In the rough polishing step,the biggest diameter of silicon dioxide particle should be used in the three polishing steps.The bigger diameter of silicon dioxide particle should be used in the medium polishing step other than in the final polishing step.Finally,the chemical mechanical polishing(CMP) process is optimized by adopting the particle diameter series in the slurry. |
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| Keywords: | GaAs Vertical Bridgeman Chemical Mechanical Polishing(CMP) surface roughness |
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