Cubic HfN Thin Films with Low Resistivity on Si (001) and MgO (001) Substrates |
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| Authors: | Roy A. Araujo Xinghang Zhang Haiyan Wang |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA;(2) Department of Mechanical Engineering, Texas A&M University, College Station, TX, USA |
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| Abstract: | We deposited epitaxial and highly textured cubic HfN (B1-NaCl) thin films on single-crystal MgO (001) and Si (001) substrates, respectively, using a pulsed laser deposition technique. The HfN thin films are around 100 nm thick. Detailed microstructural characterizations, including x-ray diffraction, transmission electron microscopy (TEM), and high-resolution TEM, were carried out. Resistivity as low as 40 μΩ cm was observed by standard four-point probe measurements. The low resistivity and good diffusion barrier properties demonstrated by our preliminary Cu-diffusion tests for HfN on Si suggest that HfN could be a promising candidate diffusion barrier for Cu interconnects. |
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| Keywords: | HfN Cu diffusion barrier pulsed laser deposition (PLD) resistivity epitaxy |
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