| Abstract: | Polycrystalline silicon (poly-Si) films have been deposited on glass substrates by a layer-by-layer technique at very low temperature, 300°C, using fluorinated precursors. The electronic transport was characterized by Hall effect and conductivity measurements over a wide temperature range, 100 K to 400 K. The structure of the materials is a function of the film thickness. The measured Hall mobility increases as the thickness increases. The Hall mobility Arrhenius plot shows linear dependence with a negative slope over the temperature range examined, suggesting that carrier conduction is limited by grain boundary barriers. |
