Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement |
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Authors: | Jianjun Gao |
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Affiliation: | School of Information Science and Technology, East China Normal University, Shanghai 200062, PR China ASIC and System State Key Laboratory, Fudan University, Shanghai 200433, PR China |
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Abstract: | A new method for the determination of the four noise parameters of the metal oxide semiconductor field effect transistors (MOSFETs) based on the noise figure measurement system without microwave tuner is presented. The noise parameters are determined based on a set of analytical expressions of noise parameters by fitting the measured noise figure of the active device. These expressions are derived from an accurate small signal and noise equivalent circuit model, which takes into account the substrate parasitics, pad capacitances, and series inductances. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 0.5 × 5 × 16 μm, 0.35 × 5 × 16 μm and 0.18 × 5 × 16 μm (gate length × number of gate fingers × unit gate width) MOSFETs. |
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Keywords: | Equivalent circuits MOSFET Semiconductor device modeling Parameter extraction Noise model Small signal model Noise figure measurement |
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