S波段GaN微波功率器件的研制

简要介绍了第三代新型半导体材料GaN的特点和优势，基于Agilent ADS微波仿真软件设计并实现了一款工作于S波段基于GaN的高效超宽带微波功率器件。测试结果表明，该器件适用于2.7～3.5GHz的超宽带，连续波和脉冲制式均可工作，在饱和状态下，输出功率大于15W，增益达到13dB，漏极效率超过45%，并在管壳内部实现了匹配和偏置电路，对GaN MOSFET微波功率器件小型化、超宽带、高增益和高效率的优异性能得以验证和实现。

Development of S-band Microwave Power Devices Using GaN HEMTs

This paper briefly introduces the features and ascendancy of the new semiconductor materials of third generation and accomplishes the design and implementation of a kind of S-band microwave power device using GaN HEMTS with ultra-wideband and high-efficiency based on microwave simulation software Agilent ADS. The test results show that this device works at both continuous and pulse signal mode on 2.7~3.5GHz.The saturated output power is over 15W, gain over 13dB and drain efficiency over 45%.In addition, the matching and bias circuits are placed in the device. It verifies and implements the miniaturization, ultra-wideband, high gain and high-efficiency of GaN MOSFET microwave power devices.