静电放电应力下深亚微米栅接地NMOSFET源端热击穿机理

基干静电敲电应力下对深亚微米硅化物工艺栅接地NMOSFET的研究，考虑了源／漏寄生串连电阻的影响，建立了源／漏接触区的电流集中模型．由模型分析表明，不同的温度和掺杂条件下，源／漏寄生串连电阻会引起器件源／漏接触前端边缘附近产生不同程度的电流集中．在器件源端产生新的热点．影响了源／满端的击穿特性．很好地解释了栅接地NMOSFET的源端热击穿机理．

Investigation of the source-side thermal breakdown mechanism in the deep submicron technology GGNMOSFET under ESD conditions

Based on the investigation of the deep-submicron silicided GGNMOSFET under ESD stress, s current crowding model at the edge of source/drain contact is presented, which includes the impact of parasitic series resistance. The model indicates that current crowding can be found in the front edge of the source/drain contact because of different device temperatures and doping concentrations of the diffusion, so a new hot spot starts to develop in the source and the thermal breakdown characteristics of the source/ drain are affected at the same time. The source-side thermal breakdown mechanism of the devices can be explained well by this model.