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Reactive ion beam deposition of aluminum nitride thin films |
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| Authors: | S. Bhat S. Ashok S. J. Fonash L. Tongson} |
| Affiliation: | (1) Engineering Science Program, The Pennsylvania State University, 16802 University Park, PA;(2) Present address: Intel Corporation, 3065 Bowers Avenue, 95051 Santa Clara, CA;(3) Present address: Department of Physics, The Pennsylvania State University, Scranton Campus |
| Abstract: | Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition. |
| Keywords: | aluminum nitride films insulating films ion beam sputtered films MNOS capacitors |
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