Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors |
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| Authors: | Chan W.K. Cox H.M. Abeles J.H. Kelty S.P. |
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| Affiliation: | Bell Communications Research, Red Bank, USA; |
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| Abstract: | We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1?m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz. |
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