| RLH/VLP-CVD低温赝同质外延硅膜微结构(英文) |
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| 引用本文： | 张荣,郑有炓,李学宁,胡立群,莫水元,顾红,林祖辰,冯端. RLH/VLP-CVD低温赝同质外延硅膜微结构(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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| 作者姓名： | 张荣 郑有炓 李学宁 胡立群 莫水元 顾红 林祖辰 冯端 |
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| 作者单位： | 南京大学物理系(张荣，郑有炓，李学宁，胡立群，莫水元，顾红)，南京大学固体微结构实验室(林祖辰)，南京大学固体微结构实验室(冯端) |
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| 摘 要： |
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Microstructure of Low-Temperature Pseudo- Homoepitaxial Silicon Film Grown by RLH/VLP-CVD |
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| Abstract: | The low-temperature processes for fabricating integrated circuits has become essential to the continuous development of smaller, faster solid-state devices and circuits. We have developed a new method, Rapid Lamp Heating/Very Low Pressure-Chemical Vapor Deposition for low-temperature silicon epitaxy. In this paper we study the microstructure of low-temperature(650-800℃) pseudo-homoepitaxial thin silicon films grown by RLH/VLP-CVD using HREM, TEM, SEM, X-ray diffraction technique and Raman spectroscopy. The results indicate that the epilayer is a high quality single crystal layer with a smooth and continuous interface. |
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