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Study on the Raman scattering measurements of Mn ion implanted GaN
Authors:Y.H. Zhang   L.L. Guo  W.Z. Shen
Affiliation:

aLaboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, PR China

Abstract:We investigate the temperature dependent Raman spectra of Mn implanted (Ga,Mn)N samples with five Mn implantation doses. A small shoulder at 572.4 cm−1 on the high energy side of the main Raman peak has been attributed to the Mn-related local vibrational mode (LVM). It is found that with the increase of Mn implantation dose the intensity ratio of LVM to that of the increases at first and tends to saturate at high implantation dose. In addition, at high temperature or after rapid thermal anneal treatment, the value of decreases significantly, explaining the reason why it is difficult to observe Mn-related LVM reported in the literature.
Keywords:Diluted magnetic semiconductors   Raman spectra   Local vibrational mode
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