| 氧离子和氮离子共注人硅形成绝缘埋层的微观结构及其光学性质 |
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| 引用本文： | 俞跃辉,林成鲁,朱文化,邹世昌,卢江.氧离子和氮离子共注人硅形成绝缘埋层的微观结构及其光学性质[J].电子与信息学报,1991,13(5):489-495. |
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| 作者姓名： | 俞跃辉 林成鲁 朱文化 邹世昌 卢江 |
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| 作者单位： | 中国科学院上海冶金研究所离子束开放研究实验室 上海
(俞跃辉，林成鲁，朱文化，邹世昌)，中国科学技术大学结构分析开放研究实验室 安徽合肥(卢江) |
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| 摘 要： | 本文利用俄歇能谱和红外吸收谱研究了硅中O+(200keV,1.81018/cm2)和N+(180keV,41017/cm2)共注入、并经1200℃、2h退火后所形成的绝缘埋层的微观结构及其光学性质。结果表明:O+和N+共注入所形成的绝缘埋层是由SiO2相和不饱和氧化硅态组成;在氧化硅埋层的两侧形成氮氧化硅薄层;表面硅-埋层的界面和埋层-体硅的界面的化学结构无明显差异。通过对波数范围在5000--1700cm-1的红外反射谱的计算机模拟,得到了该绝缘埋层的折射率、厚度等有关的参数值,这些结果与离子背散射谱的分析结果相一致。本文还讨论了绝缘埋层的形成特征。
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| 关 键 词： | O+ N+共注入 绝缘埋层 微观结构 光学性质 |
| 收稿时间： | 1990-6-4 |
| 修稿时间： | 1990-9-19 |
OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATION LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION |
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| Yu Yuehui,Lin Chenglu,Zhu Wenhua,Zou Shichang,Lu Jiang.OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATION LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION[J].Journal of Electronics & Information Technology,1991,13(5):489-495. |
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| Authors: | Yu Yuehui Lin Chenglu Zhu Wenhua Zou Shichang Lu Jiang |
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| Affiliation: | Shanghai Institute of Metallurgy Academia Sinica Shanghai;University of Science and Technology of China Hefei |
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| Abstract: | The microstructure and optical properties of a buried layer formed by O+ (200keV, 1.81018/cm2) and N+ (180keV, 41017/cm2) co-implantation and annealed at 1200 ℃ for 2h have been investigated by Auger electron, IR absorption and reflection spectroscopic measurements. The results show that the buried layer consists of silicon dioxide and SiO2 (x2) and the nitrogen segregates to the wings of the buried layer where it forms an oxyni-tride. By detail theoretical analysis and computer simulation of the IR reflection interference spectrum, refractive index profiles of the buried layer woere obtained. |
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| Keywords: | O+ and N+ co-implantation Buricd insulation laycr Microstructure Optical effects |
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