| Abstract: | A high resolution, tri-level e-beam resist process has been developed which has produced, by liftoff, planar metal features as fine as 25 nm wide by 5 Μm long on thick Si substrates. The metal features have been used as masks for transfer of the pattern into the substrate itself, producing arrays of Si membranes, 50 nm wide, 0.3 pm high and extending 5 Μm in length. We compare the resolution of the tri-level system with that obtained for a previously reported bi-level system of similar composition. |
