首页 | 本学科首页   官方微博 | 高级检索  
     


Realization of intrinsic p-type ZnO thin films by metal organic chemical vapor deposition
Authors:S T Tan  B J Chen  X W Sun  M B Yu  X H Zhang  S J Chua
Affiliation:(1) School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore, Singapore;(2) Institute of Microelectronics, 117685 Singapore, Singapore;(3) Institute of Materials Research and Engineering, 117602 Singapore, Singapore
Abstract:P-type ZnO thin films were grown on sapphire substrates with and without nitrous oxide (N2O) by metal organic chemical vapor deposition (MOCVD). The intrinsic p-type ZnO films were achieved by controlling the Zn:O ratio in the range of 0.05–0.2 without N2O flow. Secondary ion mass spectroscopy (SIMS) showed that the films contained little or no nitrogen (N) impurities for all samples. The p-type behavior of the samples should be due to the intrinsic acceptor-like defects VZn, for ZnO film grown without nitrous oxide, and N, occupying O sites as acceptors for ZnO film grown with nitrous oxide. The best p-type ZnO film has low resistivity of 0.369 Ω-cm, high carrier density of 1.62×1019 cm−3, and mobility of 3.14 cm2/V-s. The obtained p-type ZnO films possess a transmittance of nearly 100% in the visible region and strong near-band-edge emission.
Keywords:P-type ZnO  ZnO thin films  metal organic chemical vapor deposition (MOCVD)
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号