Realization of intrinsic p-type ZnO thin films by metal organic chemical vapor deposition |
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| Authors: | S T Tan B J Chen X W Sun M B Yu X H Zhang S J Chua |
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| Affiliation: | (1) School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore, Singapore;(2) Institute of Microelectronics, 117685 Singapore, Singapore;(3) Institute of Materials Research and Engineering, 117602 Singapore, Singapore |
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| Abstract: | P-type ZnO thin films were grown on sapphire substrates with and without nitrous oxide (N2O) by metal organic chemical vapor deposition (MOCVD). The intrinsic p-type ZnO films were achieved by controlling the Zn:O
ratio in the range of 0.05–0.2 without N2O flow. Secondary ion mass spectroscopy (SIMS) showed that the films contained little or no nitrogen (N) impurities for all
samples. The p-type behavior of the samples should be due to the intrinsic acceptor-like defects VZn, for ZnO film grown without nitrous oxide, and N, occupying O sites as acceptors for ZnO film grown with nitrous oxide. The
best p-type ZnO film has low resistivity of 0.369 Ω-cm, high carrier density of 1.62×1019 cm−3, and mobility of 3.14 cm2/V-s. The obtained p-type ZnO films possess a transmittance of nearly 100% in the visible region and strong near-band-edge
emission. |
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| Keywords: | P-type ZnO ZnO thin films metal organic chemical vapor deposition (MOCVD) |
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