| 多晶硅应变膜压力传感器 |
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| 引用本文： | 王跃林,刘理天,郑心畲,李志坚. 多晶硅应变膜压力传感器[J]. 半导体学报, 1990, 11(9): 694-697 |
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| 作者姓名： | 王跃林 刘理天 郑心畲 李志坚 |
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| 作者单位： | 清华大学微电子学研究所，清华大学微电子学研究所，清华大学微电子学研究所，清华大学微电子学研究所 北京 浙江大学光电子学教研室，北京，北京，北京 |
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| 摘 要： | 本文研究了多晶硅应变膜压力传感器制作技术,提出了防止多晶硅应变膜变形的工艺条件,研制出了多晶硅应变膜压力传感器。这一技术简单、与IC工艺较为兼容,适合研制集成压力传感器。
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| 关 键 词： | 压力传感器 多晶硅 应变膜 |
Polysilicon-Diaphragm pressure Sensors |
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| Wang Yaolin/Institute of Microelectronics,Tsinghua University,Beijing Liu Litian/Institute of Microelectronics,Tsinghua University,Beijing Zheng Xinyu/Institute of Microelectronics,Tsinghua University,Beijing Li Zhijian/Institute of Microelectronics,Tsinghua University,Beijing. Polysilicon-Diaphragm pressure Sensors[J]. Chinese Journal of Semiconductors, 1990, 11(9): 694-697 |
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| Authors: | Wang Yaolin/Institute of Microelectronics Tsinghua University Beijing Liu Litian/Institute of Microelectronics Tsinghua University Beijing Zheng Xinyu/Institute of Microelectronics Tsinghua University Beijing Li Zhijian/Institute of Microelectronics Tsinghua University Beijing |
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| Affiliation: | Wang Yaolin/Institute of Microelectronics,Tsinghua University,Beijing 100084Liu Litian/Institute of Microelectronics,Tsinghua University,Beijing 100084Zheng Xinyu/Institute of Microelectronics,Tsinghua University,Beijing 100084Li Zhijian/Institute of Microelectronics,Tsinghua University,Beijing 100084 |
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| Abstract: | The fabrication techniques for polysilicon-diaphragm pressure sensors were studied.Theprocess conditions for making undeformed polysilicon-diaphragm were suggested, and polysilicon-diaphragm pressure sensors were made. The technology is simple, and has better process compatibilitywith current IC technology. Therefore, it sutits to the fabrication of integrated pressuresensors. |
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| Keywords: | Pressure sensor Polysilicon Annealing |
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