| 浅结欧姆接触研究 |
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| 引用本文： | 彭进,郑宜君.浅结欧姆接触研究[J].微电子学,1990,20(1):12-14. |
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| 作者姓名： | 彭进 郑宜君 |
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| 作者单位： | 无锡微电子公司
(彭进)，无锡微电子公司(郑宜君) |
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| 摘 要： | 本文研究Al(Al-Si)/n~+(p~+)多晶硅/n~+(p~+)Si结构和Al-Si/n~+(p~+)Si结构的比接触电阻和反向漏电。结果表明,浅结时,Al/n~+(p~+)多晶硅/n~+(p~+)Si结构是良好的接触结构
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| 关 键 词： | 浅结 欧姆接触 半导体器件 装架 |
A Study on Ohmic Contacts of Shallow Junctions |
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| Peng Jin and Zheng Yijun.A Study on Ohmic Contacts of Shallow Junctions[J].Microelectronics,1990,20(1):12-14. |
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| Authors: | Peng Jin and Zheng Yijun |
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| Affiliation: | Wuxi Microelectronics Corp. |
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| Abstract: | The contact resistivity and reverse leakage currents for Al (Al-Si) /n+(p+)poly -Si/n+ (p+) Si and Al-Si/n+(p+)Si contact structures have been investigated in this paper. It has been shown that for shallow contacts, the Al/n+(p+)poly-Si/n+ (p+) Si is a better structure. |
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| Keywords: | Shallow junction Ohmic contact Contact resistivity Reverse leakage current |
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