Effect of nitridation on the electrical properties of W:Ti resistors |
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Authors: | E Lisicka-Skrzek W Coyne G Millar O Berolo |
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Affiliation: | (1) Communications Research Center, Station “H”, Post Office Box 11490, K2H 8S2 Ottawa, Ontario, Canada |
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Abstract: | The electrical properties of tungsten-titanium (W:Ti) thin film resistors sputtered in an argon-nitrogen atmosphere were investigated.
The resistivity ρ and the thermal coefficient of resistivity α were calculated as a function of film thickness and nitrogen
content. A bulk resistivity of 70±4 μΩ-cm and the mean free path λo), of 0.8±0.1 μm were obtained for samples sputtered without nitrogen. The authors believe this to be the first report for
the value of the λo in sputtered W:Ti. By appropriately controlling the nitrogen content during sputtering, it is possible to vary the value
of α from positive to negative. It was found that α decreases with the nitrogen content and is zero at 0.5% N2. This added degree of freedom in controlling α allows the integrated circuit designer to compensate the thermal effects within
a circuit by customizing the resistor parameters without significant layout modifications. |
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Keywords: | Nitridation thermal coefficient of resistance thin film resistors W:Ti |
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