UV-assisted sonochemical synthesis and optoelectrical properties of Bi2S3/rGO nanocomposites |
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| Affiliation: | 1. Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran;2. Advanced Surface Engineering and Nano Materials Research Center, Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran;3. Department of Materials Science and Engineering, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran;1. Jiangsu Optoelectronic Functional Materials and Engineering Laboratory, School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China;2. Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, Xi''an 710021, China;1. Key Laboratory of Material Chemistry for Energy Conversion and Storage (Ministry of Education), School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;2. College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China;3. School of Biological and Physical Science, Tom Mboya University College, Homa Bay 199-40300, Kenya;1. College of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, People’s Republic of China;2. College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou, 730070, People’s Republic of China;3. Department of Chemistry and Biochemistry, San Diego State University, San Diego, CA 92182, United States;4. Guangzhou Key Laboratory for Surface Chemistry of Energy Materials, New Energy Research Institute, South China University of Technology, Guangzhou, 510006, People’s Republic of China;5. College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, People’s Republic of China;6. School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People’s Republic of China |
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| Abstract: | In the present study, a simple UV-assisted sonication method is used for the development of bismuth sulfide (Bi2S3) nanostructures on graphene sheets. X-ray diffraction (XRD) and Raman results indicated that graphene oxide (GO) layers are reduced. Field emission scanning electron microscopy (FESEM) images also indicated that Bi2S3 particles without rGO sheets are agglomerated. In comparison, when adding these sheets, the particles are uniformly spread (decorated) and their size is reduced significantly due to the incorporation of rGO sheets. UV–Vis studies reveal that the band gap in Bi2S3/rGO nanocomposites compared with Bi2S3 has a shift toward shorter wavelengths, suggesting some changes in the electronic band structure of Bi2S3 due to the existence of rGO sheets. Photoluminescence (PL) analysis indicated emission bands in infrared and visible regions resulting from the band edge emission and crystal defects in the samples, respectively. The electrical investigations showed reduced recombination of photogenerated carriers in the nanocomposites. Moreover, the results indicated that the concentration of rGO is an important factor in determining the optoelectrical behavior of these devices. |
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| Keywords: | UV-assisted sonication Optical properties Electrical features Photo-switching behavior |
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