Effects of rare-earth oxide doping on the thermal radiation performance of HfO2 coating |
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| Affiliation: | 1. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China;2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China;1. V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, 45 Pr. Nauky, 03028 Kyiv, Ukraine;2. National University “Kyiv-Mohyla Academy”, 2 Skovorody str., Kyiv 04070, Ukraine;3. CIMAP, Normandie Univ., ENSICAEN, UNICAEN, CEA, CNRS, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France;1. School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Functional Material and Thin Film Technology, Beihang University (BUAA), No. 37 Xueyuan Road, Beijing, 100191, PR China;2. Xi''an Aerospace Propulsion Institute, No.289 Fei-Tian Road, Xi''an National Civil Aerospace Industrial Base, Xi''an, 71000, PR China;1. School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Functional Material and Thin Film Technology, Beihang University (BUAA), No. 37 Xueyuan Road, Beijing 100191, PR China;2. Xi’an Aerospace Propulsion Institute, No. 289 Fei-Tian Road, Xi’an National Civil Aerospace Industrial Base, Xi’an 71000, PR China;1. Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Legaria 694, Col. Irrigación, C.P. 11500 México D.F., México;2. Departamento de Materiales Metálicos y Cerámicos, Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F., México;3. Departamento de Ingeniería Eléctrica, CINVESTAV-IPN, Av. Instituto Politécnico Nacional s/n Apartado Postal 14-740, 07000 México D.F., México;4. Instituto Politecnico Nacional, Centro de Nanociencias y Micro y Nanotecnología, UPALM, Zacatenco, México-D.F. 07738, México;5. Departamento de Física, CINVESTAV-IPN, Av. Instituto Politécnico Nacional s/n Apartado Postal 14-740, 07000 México D.F., México;1. Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada IPN, Legaría 694, 11500, D.F., Mexico;2. Depto. de Física Fundamental y Experimental, Electrónica y Sistemas, Univ. de La Laguna, Av. Astrofísico Francisco Sánchez s/n E-38206, La Laguna. Tenerife, Spain;3. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito Exterior, Cd. Universitaria, 04510, D.F., Mexico;4. Departamento de Física, CINVESTAV IPN, Apartado Postal 14-740, 07000, D.F., Mexico |
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| Abstract: | In this study, the REO-HfO2 (REO = Tb4O7, Gd2O3 and Sm2O3) coatings and pure HfO2 coatings were prepared by atmospheric plasma spraying. The chemical compositions, morphologies, infrared radiation performance and thermal resistances of the coatings were systematically investigated. The experimental results showed that the Tb4O7-HfO2, Gd2O3-HfO2, Sm2O3-HfO2 and pure HfO2 coatings had infrared emissivity values of 0.863, 0.852, 0.854 and 0.621, respectively, at room temperature. Based on the phase analysis, the higher infrared emissivity of the REO-HfO2 coatings could be attributed to the fact that the newly formed RE2Hf2O7 (RE = Tb, Gd and Sm) phase, which had a defective fluorite-type structure, and the RE3+ ions enhanced the lattice absorption and electron absorption. Additionally, the Tb4O7-HfO2 coating exhibited a relatively higher infrared emissivity than those of the Gd2O3-HfO2 and Sm2O3-HfO2 coating over the wavelength range of 1–15 μm, which was due to the relatively higher vibrational frequency of the Tb O bond in RE2Hf2O7 (RE = Tb, Gd and Sm) and the transformation of Tb3+ into Tb4+ in the Tb4O7-HfO2 system. In addition, the REO-HfO2 ceramic coatings exhibited excellent thermal resistance, which could withstand high-temperature treatment at 1600 °C for at least 50 h without undergoing a phase change and exfoliation, and the infrared emissivity at different temperatures hardly changed after thermal treatment. |
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| Keywords: | Rare-earth oxides Infrared emissivity Doping |
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