Influences of Ga concentration on performances of CuInGaSe2 cells fabricated by sputtering-based method with ceramic quaternary target |
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| Affiliation: | 1. Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo, Italy;2. Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany;3. present address: Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15,12489 Berlin, Germany;4. second affiliation: Free University Berlin, Chemistry Institute, Takustr. 3, D-14195 Berlin, Germany |
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| Abstract: | Copper Indium Gallium Selenide (Cu(In,Ga)Se2, CIGSe) absorbers with different Ga contents were prepared by sputtering CIGSe ceramic targets and post-annealing. CIGSe solar cell devices were fabricated with other functional layers. The device performances and absorber properties were investigated. Increasing Ga content led to an increase in VOC and a decrease in JSC. Ga was supposed to diffuse towards back contact during the annealing process. The best performance was obtained as the ratio of Ga/(In + Ga) reaches 0.32 with the efficiency of 13.8% and a VOC of 537 mV. |
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| Keywords: | Quaternary target Thin film solar cell Sputtering Annealing |
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