Optical and electrical properties of Al doped ZnO thin film with preferred orientation in situ grown at room temperature |
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Affiliation: | 1. Functional and Renewable Energy Materials Laboratory, Indian Institute of Technology Ropar, Punjab, 140001, India;2. Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, USA;1. Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb, Croatia;2. University of Valenciennes and Hainaut-Cambresis, Boulevard du General de Gaulle, FR-59600 Maubeuge, France;3. Institute of Physics, Bijenička 46, HR-10000 Zagreb, Croatia;4. Elettra-Sincrotrone Trieste, SS 14, Km 163.5, I-34049 Basovizza, (TS), Italy |
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Abstract: | To optimize the process and obtain highly conducting and transparent Aluminum-doped zinc oxide (AZO) thin films, AZO films were deposited on glass substrates at room temperature by Radio-frequency (RF) magnetron sputtering with various Argon flow rates. The influences of Argon flow rate on structure, morphology, optical, electrical and photoluminescence properties of AZO films were investigated by varying the Argon flow rate from 36 to 68 sccm. The best quality AZO film with resistivity 1.39 × 10−3 Ω cm, sheet resistance 8.2 Ω/sq and 84.2% average visible transmittance was prepared at 44 sccm for 30 min. Also, the self-heating effect of target was investigated by preparing AZO films for 10 min and 20 min at 44 sccm, 180 W and 1.0 Pa. The influence of increasing structural quality actually affected by Argon flow rate was more prominent on carrier concentration than mobility. The schematic illustration of microstructural evolution was proposed. The average growth rate of around 60 nm/min demonstrated the self-heating effect of target was weak and could be ignored. |
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Keywords: | AZO films Magnetron RF sputtering Room temperature Argon flow rate |
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