Effect of heat treatment atmosphere on the piezoresistivity of indium tin oxide ceramic strain sensor |
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| Affiliation: | 1. Institute of Sensor and Actuator Systems, TUWien, 1040, Vienna, Austria;2. University Service Centre for Transmission Electron Microscopy, TUWien, 1040, Vienna, Austria;3. X-Ray Center, TU Wien, 1060, Vienna, Austria;1. University of Applied Sciences, Goebenstrasse 40, 66117 Saarbruecken, Germany;2. Zentrum für Mechatronik und Automatisierungstechnik – ZeMA gGmbH, Gewerbepark Eschberger Weg, 66121 Saarbruecken, Germany;3. INM – Leibniz Institute for New Materials gGmbH, Campus D2 2, 66123 Saarbruecken, Germany;1. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, PR China;2. Key Laboratory for Thin Film and Micro fabrication of the Ministry of Education, PR China;3. Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, PR China;1. Institute of Sensor and Actuator Systems, TU Wien, 1040, Vienna, Austria;2. University Service Centre for Transmission Electron Microscopy, TU Wien, 1040, Vienna, Austria;3. X-Ray Center, TU Wien, 1060, Vienna, Austria |
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| Abstract: | Indium tin oxide (ITO) strain sensors were prepared by RF magnetron sputtering, and then heat treated in nitrogen and air atmosphere, respectively. The effect of air and N2 heat treatment on the piezoresistivity of ITO ceramic strain sensors were investigated at 1200 °C. It was found that although both the ITO ceramic strain sensors heat treated in N2 and air had similar temperature coefficient of resistance (TCR), the ITO strain sensor heat treated in N2 had better resistance stability. In addition, the ITO strain sensor heat treated in N2 had a smaller but more stable gage factor, compared to that in air. These observations were attributed to the increased content of Sn4+ donors and the enhanced photon scattering due to smaller grain sizes after the incorporation of nitrogen into ITO lattice. |
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| Keywords: | ITO film Heat treatment atmosphere Strain sensor Piezoresistivity |
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