Preparation of dense and high-purity SiC ceramics by pressureless solid-state-sintering |
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| Affiliation: | 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China;2. School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China;3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China;1. School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China;2. National Key Laboratory of Science and Technology on Materials Under Shock and Impact, Beijing, 100081, China;1. School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China;2. National Key Laboratory of Science and Technology on Materials Under Shock and Impact, Beijing, 100081, China;3. Fuzhou QiYue Ceramic Powder Co., Ltd, Fuzhou, 350301, China;1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China;2. School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China;3. Suzhou Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Suzhou, 215411, China;1. Centre for Non-Oxide Ceramics, International Advanced Research Centre for Powder Metallurgy & New Materials (ARCI), Balapur PO, RCI Road, Hyderabad 500005, India;2. Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India;1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. Engineering Ceramics Research Department, Korea Institute of Materials Sciences, Changwon, Gyeongnam, Republic of Korea;3. University of the Chinese Academy of Sciences, Beijing, China;1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 02504, Republic of Korea;2. Department of Physics, Konkuk University, Seoul 05029, Republic of Korea |
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| Abstract: | High-purity SiC materials have been used in semiconductor processes due to their excellent properties. However, they are difficult to densify without sintering aids. In this work, dense and high-purity SiC ceramics have been obtained by pressureless solid-state-sintering with ultra-low contents of sintering additives. The amount of residual B, C and O in the high-purity SiC ceramics was less than 0.15 wt%, respectively, and the total content of other impurity elements (such as aluminum, magnesium, calcium, iron, etc.) was less than 0.015 wt%. Finally, the purity of the as-prepared SiC ceramics was more than 99.5 wt%. |
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| Keywords: | SiC Dense High-purity Pressureless solid-state-sintering |
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